I-diode ekhipha ukukhanya i-diode ekhethekile. Njengama-diode ajwayelekile, ama-diode akhipha ukukhanya akhiwe ngama-semiconductor chips. Lezi zinto ezisetshenziswayo ze-semiconductor zifakwa ngaphambili noma zifakwe i-doped ukukhiqiza izakhiwo zika-p kanye no-n.
Njengamanye ama-diode, i-current ku-diode ekhipha ukukhanya ingageleza kalula isuka ku-p pole (anode) iye ku-n pole (cathode), kodwa hhayi ngokuphambene. Izithwali ezimbili ezihlukene: izimbobo nama-electron ageleza esuka kuma-electrode aye ezakhiweni ze-p kanye ne-n ngaphansi kwama-electrode ahlukene. Lapho izimbobo nama-electron kuhlangana futhi kuhlangana kabusha, ama-electron awela ezingeni eliphansi lamandla futhi akhulule amandla ngendlela yama-photon (ama-photons yilokho esivame ukukubiza ngokuthi ukukhanya).
Ubude begagasi (umbala) bokukhanya okukhiphayo bunqunywa amandla ebhande le-semiconductor yezinto ezakha izakhiwo zika-p kanye no-n.
Njengoba i-silicon ne-germanium kuyizinto ezingaqondile ze-bandgap, ekamelweni lokushisa, ukuhlanganiswa kabusha kwama-electron nezimbobo kulezi zinto kuwuguquko olungelona imisebe. Izinguquko ezinjalo azikhiphi ama-photon, kodwa ziguqula amandla zibe amandla okushisa. Ngakho-ke, i-silicon ne-germanium diode ayikwazi ukukhipha ukukhanya (izokhipha ukukhanya emazingeni okushisa aphansi kakhulu, okumele kutholwe nge-engeli ekhethekile, futhi ukukhanya kokukhanya akubonakali).
Izinto ezisetshenziswa kuma-diode akhipha ukukhanya yizinto eziqondile ze-bandgap, ngakho-ke amandla akhululwa ngendlela yama-photons. Lawa mandla ebhendi anqatshelwe ahambisana namandla okukhanya kumabhande e-infrared, abonakalayo, noma aseduze ne-ultraviolet.
Le modeli ilingisa i-LED ekhipha ukukhanya engxenyeni ye-infrared ye-electromagnetic spectrum.
Ezigabeni zokuqala zokuthuthuka, ama-diode akhipha ukukhanya asebenzisa i-gallium arsenide (GaAs) angakhipha ukukhanya kwe-infrared noma okubomvu kuphela. Ngokuthuthuka kwesayensi yezinto, ama-diode asanda kuthuthukiswa angakhipha amaza okukhanya anamaza aphezulu naphezulu. Namuhla, ama-diode akhipha ukukhanya anemibala ehlukahlukene angenziwa.
Ama-Diode avame ukwakhiwa ku-substrate yohlobo lwe-N, enesendlalelo se-semiconductor yohlobo lwe-P efakwe phezu kwayo futhi ixhunywe kanye nama-electrode. Ama-substrates ohlobo lwe-P awavamile kangako, kodwa abuye asetshenziswe. Ama-diode amaningi okuhweba akhipha ukukhanya, ikakhulukazi i-GaN/InGaN, nawo asebenzisa ama-sapphire substrates.
Izinto eziningi ezisetshenziselwa ukwenza ama-LED zinezinkomba eziphezulu kakhulu ze-refractive. Lokhu kusho ukuthi amagagasi amaningi okukhanya aboniswa abuyele kokubalulekile kusixhumi esibonakalayo esinomoya. Ngakho-ke, ukukhishwa kwegagasi elikhanyayo kuyisihloko esibalulekile sama-LED, futhi ucwaningo oluningi nokuthuthukiswa kugxile kulesi sihloko.
Umehluko omkhulu phakathi kwama-LED (ama-light emitting diode) kanye nama-diode ajwayelekile yizinto zabo kanye nesakhiwo, okuholela ekwehlukeni okuphawulekayo ekusebenzeni kwabo ekuguquleni amandla kagesi abe amandla okukhanya. Nawa amanye amaphuzu abalulekile ukuchaza ukuthi kungani ama-LED angakhipha ukukhanya futhi ama-diode ajwayelekile awakwazi:
Izinto ezihlukile:Ama-LED asebenzisa izinto ze-semiconductor ye-III-V njenge-gallium arsenide (GaAs), i-gallium phosphide (GaP), i-gallium nitride (GaN), njll. Lezi zinto zine-bandgap eqondile, evumela ama-electron ukuthi agxume ngokuqondile futhi akhulule ama-photons (ukukhanya). Ama-diode avamile ngokuvamile asebenzisa i-silicon noma i-germanium, ene-bandgap engaqondile, futhi ukugxuma kwe-electron kwenzeka ikakhulukazi ngendlela yokukhululwa kwamandla okushisa, kunokukhanya.
Isakhiwo esihlukile:Isakhiwo sama-LED siklanyelwe ukuthuthukisa ukukhiqizwa nokukhishwa kokukhanya. Ama-LED ngokuvamile engeza ama-dopant athile kanye nezakhiwo zesendlalelo ku-pn junction ukuze akhuthaze ukukhiqizwa nokukhululwa kwama-photon. Ama-diode ajwayelekile aklanyelwe ukuthuthukisa umsebenzi wokulungisa wamanje futhi angagxili ekukhiqizeni ukukhanya.
I-Energy bandgap:Impahla ye-LED inamandla amakhulu e-bandgap, okusho ukuthi amandla akhishwe ama-electron ngesikhathi soshintsho aphakeme ngokwanele ukuze avele ngesimo sokukhanya. Amandla we-bandgap wezinto zama-diode ajwayelekile mancane, futhi ama-electron akhululwa ikakhulukazi ngendlela yokushisa lapho eshintsha.
Indlela ye-Luminescence:Lapho i-pn junction ye-LED ingaphansi kokuchema okuya phambili, ama-electron asuka endaweni n aye endaweni engu-p, aphinde ahlangane nezimbobo, futhi akhulule amandla ngendlela yama-photons ukuze akhiqize ukukhanya. Kuma-diode ajwayelekile, ukuhlanganiswa kabusha kwama-electron kanye nezimbobo kuyindlela yokuhlanganiswa okungenayo imisebe, okungukuthi, amandla akhululwa ngendlela yokushisa.
Lo mehluko uvumela ama-LED ukuthi akhiphe ukukhanya lapho esebenza, kuyilapho ama-diode ajwayelekile engakwazi.
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Isikhathi sokuthumela: Aug-01-2024